DIM800JSM33-A000
DIM800JSM33-A000
High Isolation Single Switch IGBT Module
Preliminary Information
Replaces December 2001, version DS5512-1.1
DS5512-2.0 February 2003
FEATURES
I
I
I
I
I
KEY PARAMETERS
V
CES
V
CE(sat)
I
C
I
C(PK)
(typ)
(max)
(max)
3300V
3.2V
800A
1600A
External connection
10.5kV Isolation
10碌s Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
I
I
I
C1
Aux C
C2
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
G
Aux E
E1
E2
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM800JSM33-A000 is a single switch high isolation
3300V, n channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10碌s short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate.
The profile of the lid in combination with features within the
module provides 10.5kV isolation rating.
External connection
Fig. 1 Single switch circuit diagram
E
1
G
E1
C
1
C1
E2
C2
ORDERING INFORMATION
Order As:
DIM800JSM33-A000
Note: When ordering, please use the whole part number.
Outline type code:
J
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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