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DIM75CHS12-E000

DIM75CHS12-E000

Half Bridge IGBT Module

PDS5711-1.2 January 2004

FEATURES

I

I

I

I

Trench Gate Field Stop Technology

Low Conduction Losses

Low Switching Losses

10碌s Short Circuit Withstand

KEY PARAMETERS

V

CES

(typ)

V

CE(sat)

(max)

I

C

(max)

I

C(PK)

1200V

1.7V

75A

150A

APPLICATIONS

I

I

I

I

Inverters

Motor Controllers

UPS

Electronic Welders

7(E

2

)

6(G

2

)

1(E1C2)

2(E2)

3(C1)

4(G

1

)

The Powerline range of high power modules includes half

bridge, chopper, dual, single and bi-directional switch

configurations covering voltages from 600V to 3300V and

currents up to 3600A.

The DIM75CHS12-E000 is a half bridge 1200V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) plus full 10碌s short circuit withstand.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

Fig. 1 Half bridge circuit diagram

5(E

1

)

ORDERING INFORMATION

Order As:

DIM75CHS12-E000

Note: When ordering, please use the complete part number.

Outline type code: C

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/8

www.dynexsemi.com

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DIM75CHS12-E相關(guān)型號PDF文件下載

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• DIM75CHS12...
  英文版
  IGBT Modules - Half Bridge
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  英文版
  IGBT Modules - Half Bridge
  DIM75CHS12-E

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