DIM600DDM17-A000
DIM600DDM17-A000
Dual Switch IGBT Module
DS5596-1.1 April 2003
FEATURES
I
I
I
I
10碌s Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
*
(max)
I
C
(max)
I
C(PK)
1700V
2.7V
600A
1200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
I
High Reliability Inverters
Motor Controllers
Traction Drives
5(E
1
)
1(E1)
2(C2)
12(C
2
)
6(G
1
)
11(G
2
)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM600DDM17-A000 is a dual switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10碌s short circuit withstand. This module is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
7(C
1
)
3(C1)
10(E
2
)
4(E2)
Fig. 1 Dual switch circuit diagram
5
6
3
7
8
1
ORDERING INFORMATION
9
Order As:
DIM600DDM17-A000
Note: When ordering, please use the complete part number.
12
11
10
4
2
Outline type code:
D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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