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DIM50CHS17-E Datasheet

  • DIM50CHS17-E

  • IGBT Modules - Half Bridge

  • 8頁(yè)

  • ETC

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DIM50CHS17-E000
DIM50CHS17-E000
Half Bridge IGBT Module
PDS5718-1.2 February 2004
FEATURES
I
I
I
I
Trench Gate Field Stop Technology
Low Conduction Losses
Low Switching Losses
10碌s Short Circuit Withstand
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1700V
2.0V
50A
100A
APPLICATIONS
I
I
I
Motor Drives
Wind Turbines
UPS Systems
7(E
2
)
6(G
2
)
1(E1C2)
2(E2)
3(C1)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM50CHS17-E000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10碌s short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
4(G
1
)
5(E
1
)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM50CHS17-E000
Note: When ordering, please use the complete part number.
Outline type code:
W
(See package details for further information)
Fig. 2 Module Outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
www.dynexsemi.com

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