DIM400GDM33-F000
DIM400GDM33-F000
Dual Switch IGBT Module
PDS5616-1.1 June 2003
FEATURES
I
I
I
I
Soft Punch Through Silicon
10碌s Short Circuit Withstand
Isolated MMC Base with AlN Substrates
High Thermal Cycling Capability
KEY PARAMETERS
V
CES
V
CE(sat)
*
(typ)
I
C
(max)
(max)
I
C(PK)
3300V
3.0V
400A
800A
*(Measured at the auxiliary terminals)
APPLICATIONS
I
I
I
High Reliability Inverters
Motor Controllers
Traction Auxiliaries
7 (E
1
)
1 (E1)
2 (C2)
10 (C
2
)
6 (G
1
)
9 (G
2
)
5 (C
1
)
8 (E
2
)
3 (C1)
4 (E2)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM400GDM33-F000 is a dual switch 3300V, soft punch
through, n channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide reverse bias
safe operating area (RBSOA) plus full 10碌s short circuit
withstand. This device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Dual switch circuit diagram
ORDERING INFORMATION
Order As:
DIM400GDM33-F000
Note: When ordering, please use the whole part number.
Outline type code:
G
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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