DIM400GDM33-A000
DIM400GDM33-A000
Dual Switch IGBT Module
Preliminary Information
Replaces September 2001, version DS5495-1.2
DS5495-1.2 September 2001
FEATURES
s
s
s
s
10碌s Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V
CES
V
CE(sat)
(typ)
(max)
I
C
I
C(PK)
(max)
3300V
3.2V
400A
800A
APPLICATIONS
s
s
s
External connection
E
1
E1
C2
C
2
High Reliability Inverters
Motor Controllers
Traction Drives
G
1
G
2
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM400GDM33-A000 is a dual switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10碌s short circuit withstand. This device is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
C
1
C1
E2
E
2
Fig. 1 Dual switch circuit diagram
C1
E1
G1
C2
C1
E1
ORDERING INFORMATION
Order As:
DIM400GDM33-A000
Note: When ordering, please use the whole part number.
C2
G2
E2
E2
E2 - Aux Emitter
C1 - Aux Collector
Outline type code:
G
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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