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DIM2400ESS12-A000 Datasheet

  • DIM2400ESS12-A000

  • Single Switch IGBT Module

  • 814.26KB

  • 9頁

  • DYNEX

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DIM2400ESS12-A000
Single Switch IGBT Module
DS5840-1.1 June 2005 (LN24075)
FEATURES
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10碌s Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Base plate
KEY PARAMETERS
V
CES
V
CE (sat)*
(typ)
I
C
(max)
I
C(PK)
(max)
*
1200V
2.2V
2400A
4800A
Lead Free construction
(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
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High Power Inverters
Motor Controllers
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 3600A.
The DIM2400ESS12-A000 is a single switch 1200V,
n channel enhancement mode, insulated gate
bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus
full 10碌s short circuit withstand.
Fig. 1 Single switch circuit diagram
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM2400ESS12-A000
Note: When ordering, please use the whole part number.
Outline type code: E
(See package details for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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www.dynexsemi.com

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