DIM200MBS12-A000
DIM200MBS12-A000
IGBT Bi-Directional Switch Module
Replaces issue August 2003, version DS5543-3.1
FDS5545-4.0 September 2003
FEATURES
I
I
I
10碌s Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Baseplate
KEY PARAMETERS
V
DRM
(typ)
V
T
(max)
I
C
(max)
I
C(PK)
鹵
1200V
4.3V
200A
400A
APPLICATIONS
I
I
I
Matrix Converters
Brushless Motor Controllers
Frequency Converters
7(E
2
)
6(G
2
)
11(C
2
)
1(C2)
2(E1E2)
3(C1)
9(C
1
)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200MBS12-A000 is a bi-directional 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10碌s short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
4(G
1
)
5(E
1
)
Note: There are 2 auxiliary emitter connections (pins 5 and 7).
If these are connected together externally, it is recommended that a
proportion of the gate resistance (20% typically) is included in the
auxiliary emitter to prevent large circulating currents. See figure 13.
Fig. 1 Bi-directional switch circuit diagram
ORDERING INFORMATION
Order As:
DIM200MBS12-A000
Note: When ordering, please use the whole part number.
11
10
8
9
1
2
3
6
7
5
4
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com