DIM1200NSM17-E000
DIM1200NSM17-E000
Single Switch IGBT Module
PDS5644-1.0 August 2003
FEATURES
I
I
I
I
I
I
Trench Gate Field Stop Technology
Low Conduction Losses
Low Switching Losses
10碌s Short Circuit Withstand
Isolated MMC Base with AlN Substrates
High Thermal Cycling Capability
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
*
(max)
I
C
(max)
I
C(PK)
1700V
2.0V
1200A
2400A
*
Measured at auxiliary terminals.
External connection
C1
C2
APPLICATIONS
I
Aux C
High Reliability Inverters
G
G
G
Wind Turbines
Motor Controllers
UPS Systems
G
Aux E
E1
E2
I
Traction
G
G
External connection
Propulsion Drives
Auxiliaries
Fig. 1 Single switch circuit diagram
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM1200NSM17-E000 is a single switch 1700V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10碌s short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
E
2
G
C
1
E1
C1
E2
C2
E
2
- Aux Emitter
C
1
- Aux Collector
ORDERING INFORMATION
Order As:
DIM1200NSM17-E000
Note: When ordering, please use the complete part number.
Outline type code:
N
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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