DIM1200DDM17-E000
DIM1200DDM17-E000
Dual Switch IGBT Module
PDS5603-1.4 June 2003
FEATURES
I
I
I
I
I
I
Trench Gate Field Stop Technology
Low Conduction Losses
Low Switching Losses
10碌s Short Circuit Withstand
Isolated MMC Base with AlN Substrates
High Thermal Cycling Capability
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
*
(max)
I
C
(max)
I
C(PK)
1700V
2.0V
1200A
2400A
*
Measured at auxiliary terminals.
APPLICATIONS
I
5(E
1
)
1(E1)
2(C2)
12(C
2
)
High Reliability Inverters
G
G
G
6(G
1
)
11(G
2
)
Wind Turbines
Motor Controllers
UPS Systems
3(C1)
4(E2)
7(C
1
)
10(E
2
)
I
Traction
G
G
Propulsion Drives
Auxiliaries
Fig. 1 Dual switch circuit diagram
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM1200DDM17-E000 is a dual switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10碌s short circuit withstand. This module is
optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
7
5
6
3
8
1
9
12
11
10
4
2
ORDERING INFORMATION
Order As:
DIM1200DDM17-E000
Note: When ordering, please use the complete part number.
Outline type code:
D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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