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DIM100WHS12-A Datasheet

  • DIM100WHS12-A

  • IGBT Modules - Half Bridge

  • 8頁

  • ETC

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DIM100WHS12-A000
DIM100WHS12-A000
Half Bridge IGBT Module
DS5735-1.0 Fbruary 2004
FEATURES
I
I
I
10碌s Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Baseplate
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
*
(max)
I
C
(max)
I
C(PK)
1200V
2.2V
100A
200A
*(Measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
Inverters
Motor Controllers
7(E
2
)
6(G
2
)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100WHS12-A000 is a half bridge switch 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10碌s short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
1(E1C2)
2(E2)
3(C1)
4(G
1
)
5(E
1
)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM100WHS12-A000
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
www.dynexsemi.com

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