DIM100PHM33-A000
DIM100PHM33-A000
Half Bridge IGBT Module
PDS5708-1.3 January 2004
FEATURES
I
I
I
I
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
(typ)
(max)
(max)
3300V
3.4V
100A
200A
10碌s Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
I
1(E1/C2)
2(C1)
5(E
1)
4(G
1)
3(E2)
7(E
2)
6(G
2)
High Reliability Inverters
Motor Controllers
Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100PHM33-A000 is a half bridge 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10碌s short circuit withstand. This device is
optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
8(C
1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM100PHM33-A000
Note: When ordering, please use the whole part number.
Outline type code:
P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
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