DIONICS, INC.
65 Rushmore Street
Westbury, NY 11590
Phone: (516) 997-7474
Fax: (516) 997-7479
Website: www.dionics- usa.com
DIG-11-15-30-SM Photovoltaic MOSFET / IGBT Driver
Features:
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Applications:
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Optically Isolated
Constructed For Surface Mount Assembly
Suitable For Manual or Automatic Placement
Sturdy Construction, Immune To Handling Damage
Fast Turn On, Turn Off & Active Gate Discharge
Dielectrically Isolated PV IC Construction
High Open Circuit Voltage Up To 17.5V
High Isolation Resistance
MOSFET/IGBT Driver
Medical Implant Application
Medical Solid-State Relays
A.T.E. (Automatic Test Equipment)
Medical Test Equipment
Isolation Amplifiers
Load Control From Microprocessor I/O Ports
Thermocouple Open Detectors
Description:
The DIG-11-15-30-SM Photovoltaic is a State-of-the-Art, optically-coupled floating power source used primarily to
control MOSFET/IGBT鈥檚 when electrical isolation between input and output is required. It is particularly well suited for
Medical implant applications.
In addition to the infrared LED and photovoltaic (PV) diode array, each of the DIG-11-15-30-SM devices contains
circuitry that rapidly discharges the power MOSFET/IGBT gate when the LED is deactivated. The unique rapid discharge
feature of the DIG-11-15-30-SM makes it particularly useful for high side switching of MOSFET/IGBT鈥檚 in Medical
applications, DC motor control and switching regulator applications. The rugged design features a hard ceramic top, 2
hard sides and of course a hard ceramic bottom. Therefore, it is ideal for manual and automatic vacuum pencil assembly
methods, with handling damage almost impossible.
The typical input circuit to the LED is a limiting resistor connected in series with the LED. When activated, the LED
emits infrared light towards the photovoltaic diode array, which then responds by generating an open circuit voltage (V
oc
)
and disabling the turn off circuitry. The self-limiting photovoltaic output of the diode array is floating and therefore, can
be safely applied directly to the MOSFET/IGBT, regardless of the source potential of the MOSFET/IGBT. When the LED
is deactivated, the active turn-off circuit discharges the capacitive input of the MOSFET/IGBT. The active turn-off
circuitry is designed such that the turn-off time of the MOSFET/IGBT is relatively independent of the input capacitance
over a range of 300 to 5000 pF.
DIG-11-15-30-SM Layout:
140 mil
50
mil
130 mil
DIG-11-15-30-SM Configuration:
Pad
Number
3
4
130 mil
Function
Size
(Inches)
1
2
3
4
+ Input
- Input
+ V
o
- V
o
0.030 x 0.050
0.030 x 0.030
0.030 x 0.030
0.030 x 0.030
140 mil
11 15 30
2
Top View
Side View
1
Bottom View
03/2002
1
2
