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DGS3-01AS Datasheet

  • DGS3-01AS

  • Gallium Arsenide Schottky Rectifier

  • 2頁

  • IXYS   IXYS

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Advanced Technical Information
DGS 3-01AS
I
FAV
= 12 A
V
RRM
= 100 V
C
Junction
= 19 pF
Gallium Arsenide Schottky Rectifier
V
RSM
V
100
V
RRM
V
100
Type
Marking
on product
A
C
TO-252 AA
A
A
C (TAB)
DGS 3-01AS
3A010AS
A = Anode, C = Cathode , TAB = Cathode
Symbol
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
Conditions
T
C
= 25擄C; DC
T
C
= 90擄C; DC
T
VJ
= 45擄C; t
p
= 10 ms (50 Hz); sine
Maximum Ratings
12
8.5
10
-55...+175
-55...+150
A
A
A
Features
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
擄C
擄C
鈼?/div>
鈼?/div>
T
C
= 25擄C
18
W
鈼?/div>
Low forward voltage
Very high switching speed
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
Applications
鈼?/div>
Symbol
I
R
V
F
C
J
R
thJC
Weight
鈶?/div>
Conditions
V
R
= V
RRM
;
V
R
= V
RRM
;
I
F
= 2 A;
I
F
= 2 A;
V
R
= 50 V;
T
VJ
= 25擄C
T
VJ
= 125擄C
T
VJ
= 125擄C
T
VJ
= 25擄C
T
VJ
= 125擄C
Characteristic Values
typ.
max.
鈼?/div>
鈼?/div>
0.7
0.7
0.54
0.62
19
8.5
0.3
0.8
mA
mA
V
V
pF
K/W
g
鈼?/div>
MHz switched mode power supplies
(SMPS)
Small size SMPs
High frequency converters
Resonant converters
Pulse test:
鈶?/div>
Pulse Width = 5 ms, Duty Cycle < 2.0%
Data according to DIN/IEC 747 and per diode unless otherwise specified
IXYS reserve the right to change limits, conditions and dimensions.
漏 2002 IXYS All rights reserved
1-2
238

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