DGS 20-018AS
Gallium Arsenide Schottky Rectifier
Preliminary Data
I
FAV
= 23 A
V
RRM
= 180 V
C
Junction
= 33 pF
V
RSM
V
180
V
RRM
V
180
Type
A
C
TO-263 AB
A
DGS 20-018AS
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
Conditions
T
C
= 25擄C; DC
T
C
= 90擄C; DC
T
VJ
= 45擄C; t
p
= 10 ms (50 Hz), sine
Maximum Ratings
23
17
30
-55...+175
-55...+150
A
A
A
擄C
擄C
W
T
C
= 25擄C
48
Features
Low forward voltage
Very high switching speed
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
q
q
q
q
q
q
q
Applications
MHz Switched mode power supplies
q
(SMPs)
q
q
q
Small size SMPs
High frequency converters
Resonant converters
Symbol
I
R
V
F
C
J
R
thJC
Weight
Conditions
T
VJ
= 25擄C V
R
= V
RRM
T
VJ
= 125擄C V
R
= V
RRM
I
F
= 7.5 A;
I
F
= 7.5 A;
T
VJ
= 125擄C
T
VJ
= 25擄C
Characteristic Values
typ.
max.
2.0
2.0
0.8
0.8
33
3.1
2
1.0
mA
mA
V
V
pF
K/W
g
V
R
= 100 V; T
VJ
= 125擄C
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
119
IXYS reserves the right to change limits, Conditions and dimensions.
漏 2001 IXYS All rights reserved
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