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DG858DW Datasheet

  • DG858DW

  • GTO Thyristor - Asymmetric - Disc / Puk Devices

  • 7頁

  • ETC

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DG858DW45
DG858DW45
Gate Turn-Off Thyristor
Replaces July 1999 version, DS4334-4.0
DS4334-4.1 May 2000
FEATURES
q
q
q
q
q
q
Double Side Cooling
High Reliability In Service
High Voltage Capability
Fault Protection Without Fuses
High Surge Current Capability
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
KEY PARAMETERS
3000A
I
TCM
4500V
V
DRM
1100A
I
T(AV)
750V/
碌
s
dV
D
/dt
300A/
碌
s
dI
T
/dt
APPLICATIONS
q
q
q
q
q
q
q
Variable speed A.C. motor drive inverters (VSD-AC).
Uninterruptable Power Supplies
High Voltage Converters.
Choppers.
Welding.
Induction Heating.
DC/DC Converters.
Package outline type code : W
See Package Details for further information.
Fig.1 Package outline
VOLTAGE RATINGS
Type Number
Repetitive Peak Off-state
Voltage
V
DRM
V
4500
Repetitive Peak Reverse
Voltage
V
RRM
V
16
Conditions
DG858DW45
T
vj
= 125
o
C, I
DRM
=100mA,
I
RRM
= 50mA
CURRENT RATINGS
Symbol
I
TCM
I
T(AV)
I
T(RMS)
Parameter
Conditions
Max.
3000
Units
A
A
A
1/7
o
Repetitive peak controllable on-state current V
D
= V
DRM
, T
j
= 125 C, di
GQ
/dt = 40A/碌s,
Cs = 4.0碌F, L
S
鈮?/div>
200nH
Mean on-state current
RMS on-state current
T
HS
= 80
o
C. Double side cooled, half sine 50Hz. 1100
T
HS
= 80
o
C. Double side cooled, half sine 50Hz. 1720

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