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DG858BW Datasheet

  • DG858BW

  • GTO Thyristor - Asymmetric - Disc / Puk Devices

  • 19頁

  • ETC

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DG858BW45
DG858BW45
Gate Turn-off Thyristor
Replaces July 1999 version, DS4096-3.0
DS4096-4.0 January 2000
FEATURES
q
q
q
q
q
q
Double Side Cooling
High Reliability In Service
High Voltage Capability
Fault Protection Without Fuses
High Surge Current Capability
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
KEY PARAMETERS
3000A
I
TCM
V
DRM
4500V
I
T(AV)
1180A
dV
D
/dt
1000V/
碌
s
di
T
/dt
300A/
碌
s
APPLICATIONS
q
q
q
q
q
q
q
Variable speed A.C. motor drive inverters (VSD-AC)
Uninterruptable Power Supplies
High Voltage Converters
Choppers
Welding
Induction Heating
DC/DC Converters
Package outline type code: W.
See Package Details for further information.
Figure 1. Package outline
VOLTAGE RATINGS
Type Number
Repetitive Peak
Off-state Voltage
V
DRM
V
4500
Repetitive Peak Reverse
Voltage
V
RRM
V
16
Conditions
DG858BW45
T
vj
= 125
o
C, I
DM
= 100mA,
I
RRM
= 50mA
CURRENT RATINGS
Symbol
I
TCM
I
T(AV)
I
T(RMS)
Parameter
Conditions
Max.
3000
1180
1850
Units
A
A
A
1/19
Repetitive peak controllable on-state current V
D
= 66% V
DRM
, T
j
= 125
o
C, di
GQ
/dt = 40A/碌s, Cs = 3碌F
Mean on-state current
RMS on-state current
T
HS
= 80
o
C. Double side cooled, half sine 50Hz
T
HS
= 80
o
C. Double side cooled, half sine 50Hz

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