Bulletin U2788 rev. G 04/03
DF SERIES
1A Single Phase D.I.L. Rectifier Bridge
Features
鈥?Glass passivated chips
鈥?Leads on standard 0.1" grid
鈥?Suitable for automatic insertion
鈥?High surge current capability
鈥?Fully characterised data
鈥?Wide temperature range
鈥?Surface mount option
鈥?Lead free terminals solderable as per
MIL-STD-750 Method 2026
鈥?High temperature soldering guaranteed 260擄C/8-10 secs
鈥?Polarity symbols marked on the case
鈥?UL E160375 approved
Description
The DF Series of Single Phase Rectifier Bridges
consists of four silicon junctions encapsulated in a 4
pin D.I.L. package. These devices are intended for
general use in industrial and consumer equipment.
+
~
~
I
O(av)
I
O(av)
= 1.0 A
V
RRM
range
50 to 1000V
-
Electrical Specification
DF...
I
O
I
FSM
Maximum DC output
current
Maximum peak one
cycle, non-repetitive
surge current
I
2
t
Maximum I
2
t capability
for fusing
4.5
4.1
6.4
5.8
I
鈭歵
2
2
Units Conditions
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A
鈭歴
2
1.0
0.8
30
31
T
amb
= 40
o
C, Resistive or inductive load
T
amb
= 40
o
C, Capacitive load
t = 10ms, 20ms
t = 8.3ms, 16.7ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Following any rated
load condition and with
rated V
RRM
reapplied
Initial T
J
= T
J
max
100% V
RRM
reapplied
Initial T
J
= T
J
max
no voltage reapplied
Maximum I
鈭歵
capability for fusing
Maximum peak forward
voltage per diode
Typical peak reverse
leakage per diode
Operating frequency
range
Maximum repetitive peak
reverse voltage range
64
1.0
5
100
50 to 1000
50 to 1000
t = 0.1 to 10ms, no voltage reapplied
I
FM
= 1.0A, T
J
= 25
o
C
T
J
= 25
o
C, 100% V
RRM
T
J
= 150
o
C, 100% V
RRM
V
FM
I
RM
f
V
RRM
V
碌A
碌A
Hz
V
Thermal and Mechanical Specifications
DF...
T
J
T
stg
R
thJA
W
Operating and storage
temperature range
Thermal resistance,
junctions to ambient
Approximate weight
0.6 (0.02)
g (oz)
60
K/W
- 55 to 150
Units
o
Conditions
C
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