DF5A6.8F Datasheet

IC型號(hào)：
DF5A6.8F
PDF描述：
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar T...
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136.36KB
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3頁
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TOSHIBA

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DF5A6.8F

TOSHIBA Diodes for Protecting against ESD

Epitaxial Planar Type

DF5A6.8F

Diodes for Protecting against ESD

Unit: mm

鈥?/div>

The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

鈥?/div>

The zener voltage corresponds to the E24 Series.

Maximum Ratings

(Ta = 25擄C)

Characteristic

Power dissipation

Junction temperature

Storage temperature range

Symbol

stg

Rating

200

125

鈭?5~125

Unit

擄C

Electrical Characteristics

(Ta = 25擄C)

Characteristic

Zener voltage

Dynamic impedance

Knee dynamic impedance

Reverse current

Terminal capacitance

(between Cathode and Anode)

Symbol

= 5 mA

= 0.5 mA

= 5 V

= 0, f = 1 MHz

Test Condition

鈥?/div>

JEDEC

鈥?/div>

JEITA

1-3H1A

TOSHIBA

Weight: 0.014 g (typ.)

Min

6.4

鈥?/div>

Typ.

6.8

鈥?/div>

Max

7.2

鈥?/div>

0.5

鈥?/div>

Unit

鈩?/div>

碌A(chǔ)

Guaranteed Level of ESD Immunity

Test Condition

IEC61000-4-2

(Contact discharge)

ESD Immunity Level

鹵

30kV

Criterion: No damage to device elements

Marking

Equivalent Circuit

(Top View)

2004-11-08

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