鈥?/div>
The mounting of two devices in an ultra-compact package enables a
reduction in the number of parts and in the mounting cost.
Low terminal capacitance: C
T
= 5.0 pF (typ.)
1
2
3
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
150
*
150
鈭?5~150
Unit
mW
擄C
擄C
0.5鹵0.05
VESM
1. CATHODE1
2. CATHODE2
3. ANODE
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*:
Mounted on an FR4 board (25.4 mm
脳
25.4 mm
脳
1.6 mmt)
0.5mm
0.45mm
0.45mm
0.4mm
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
1-1Q1B
Weight: 0.0015 g (typ.)
Electrical Characteristics
(Ta = 25擄C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
7.8
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
8.2
鈳?/div>
鈳?/div>
5.0
Max
8.6
60
0.5
鈳?/div>
Unit
V
惟
渭A
pF
1
2007-11-01
DF3A8.2LFV相關型號PDF文件下載
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