鈥?/div>
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
1-2P1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25擄C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
Z
ZK
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
I
Z
=
0.5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
7.8
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
8.2
鈳?/div>
鈳?/div>
鈳?/div>
5.0
Max
8.6
60
100
0.5
鈳?/div>
Unit
V
惟
惟
渭A
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
Marking
(top view)
Equivalent Circuit
FU
鹵
6kV
Criterion: No damage to device elements
1
2007-11-01
DF3A8.2LFU_07相關(guān)型號PDF文件下載
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DIODES (DIODES FOR PROTECTING AGAINST ESD)
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DIODES (DIODES FOR PROTECTING AGAINST ESD)
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DIODES (DIODES FOR PROTECTING AGAINST ESD)
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TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar T...
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TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar T...
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