Note: Using continuously under heavy loads (e.g. the application of high
鈥?/div>
temperature/current/voltage and the significant change in
TOSHIBA
1-2SA1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.0023 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Total capacitance
Symbol
V
Z
Z
Z
Z
ZK
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
I
Z
=
0.5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
7.8
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
8.2
鈳?/div>
鈳?/div>
鈳?/div>
5.0
Max
8.6
60
100
0.5
鈳?/div>
Unit
V
惟
惟
渭A
pF
Guaranteed Level of ESD Immunity
Marking
(top view)
Equivalent Circuit
Test Condition
IEC61000-4-2
(contact discharge)
ESD Immunity Level
鹵
6 kV
FU
Q1
Q2
1
2007-11-01
DF3A8.2LFE_07相關型號PDF文件下載
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廠商
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英文版
DIODES (DIODES FOR PROTECTING AGAINST ESD)
TOSHIBA
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英文版
DIODES (DIODES FOR PROTECTING AGAINST ESD)
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DIODES (DIODES FOR PROTECTING AGAINST ESD)
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Product for Use Only as Protection against Electrostatic Dis...
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Product for Use Only as Protection against Electrostatic Dis...
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TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar T...
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TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar T...
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英文版
DIODES (DIODES FOR PROTECTING AGAINST ESD)
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DIODES (DIODES FOR PROTECTING AGAINST ESD)
TOSHIBA [T...
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