the constant voltage diode application.
鈥?/div>
Incorporating two devices in a single ultra-compact package reduces the
number of parts and lowers the mounting cost.
1
2
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P*
T
j
T
stg
Rating
150
150
鈭?5~150
Unit
mW
擄C
擄C
1. CATHODE1
2. CATHODE2
3. ANODE
VESM
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
*:
Mounted on FR4 board (25.4 mm
脳
25.4 mm
脳
1.6 mmt)
0.5mm
0.45mm
0.45mm
0.4mm
JEDEC
JEITA
TOSHIBA
鈳?/div>
鈳?/div>
1-1Q1B
Weight: 0.0015g (typ.)
Electrical Characteristics
(Ta = 25擄C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
6.5 V
V
R
= 0, f = 1MHz
Test Condition
Min
7.7
Typ.
8.2
Max
8.7
20
0.5
鈥?/div>
Unit
V
惟
渭A
pF
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