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DE375-102N10A Datasheet

  • DE375-102N10A

  • RF Power MOSFET

  • 3頁

  • IXYS   IXYS

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DE375-102N10A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
Symbol
Test Conditions
T
c
= 25擄C
Derate 4.4W/擄C above 25擄C
T
c
= 25擄C
V
DSS
I
D25
Maximum Ratings
1000
1000
鹵20
鹵30
10
60
10
30
5
>200
940
425
4.5
0.16
0.23
Characteristic Values
min.
typ.
V
V
V
V
A
A
A
mJ
V/ns
V/ns
W
W
W
C/W
C/W
Features
T
J
= 25擄C unless otherwise specified
SG1
SG2
GATE
=
=
=
=
1000 V
10 A
1.2
鈩?/div>
940 W
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
c
= 25擄C
T
c
= 25擄C, pulse width limited by T
JM
T
c
= 25擄C
T
c
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
飥?/div>
100A/碌s, V
DD
鈮?/div>
V
DSS
,
T
j
鈮?/div>
150擄C, R
G
= 0.2鈩?/div>
I
S
= 0
R
DS(on)
P
DC
DRAIN
SD1
SD2
max.
V
5.5
鹵100
V
nA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
V
GS
= 0 V, I
D
= 3 ma
V
DS
= V
GS
, I
D
= 4 ma
V
GS
= 鹵20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
T
J
= 25擄C
V
GS
= 0
T
J
= 125擄C
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
鈮?/div>
300碌S, duty cycle d
鈮?/div>
2%
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
1000
2.5
鈥?/div>
Isolated Substrate
鈭?/div>
high isolation voltage (>2500V)
鈭?/div>
excellent thermal transfer
鈭?/div>
Increased temperature and power
鈥?/div>
鈥?/div>
鈭?/div>
鈭?/div>
鈥?/div>
鈥?/div>
鈥?/div>
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
50
碌A(chǔ)
1 mA
1.2
6
-55
150
-55
+150
300
3
18
+150
鈩?/div>
S
擄C
擄C
擄C
擄C
g
Advantages
鈥?/div>
Optimized for RF and high speed
鈥?/div>
鈥?/div>
High power density
switching at frequencies to 50MHz
Easy to mount鈥攏o insulators needed
1.6mm (0.063 in) from case for 10 s

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