Directed Energy, Inc.
An
DE150-102N02A
RF Power MOSFET
Preliminary Data Sheet
IXYS
Company
N-Channel Enhancement Mode
Avalanche Rated
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DHS
P
DAMB
T
J
T
JM
T
stg
T
L
Weight
Symbol
Test Conditions
Characteristic Values
T
J
= 25擄C unless otherwise specified
1.6mm (0.063 in) from case for 10 s
V
DSS
I
D25
R
DS(on)
Maximum Ratings
1000
1000
鹵20
鹵30
1.5
9
1.5
6
3
>200
80
3.5
-55鈥?150
150
-55鈥?150
300
2
V
V
V
V
A
A
A
mJ
V/ns
V/ns
W
W
擄C
擄C
擄C
擄C
g
Features
SG1
SG2
GATE
=
=
=
=
1000 V
1.5 A
11
鈩?/div>
80W
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
c
= 25擄C
T
c
= 25擄C, pulse width limited by T
JM
T
c
= 25擄C
T
c
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
飥?/div>
100A/碌s, V
DD
鈮?/div>
V
DSS
,
T
j
鈮?/div>
150擄C, R
G
= 0.2鈩?/div>
I
S
= 0
T
c
= 25擄C
Derate 4.4W/擄C above 25擄C
T
c
= 25擄C
P
DHS
DRAIN
SD1
SD2
鈥?/div>
Isolated Substrate
鈭?/div>
high isolation voltage (>2500V)
鈭?/div>
excellent thermal transfer
鈭?/div>
Increased temperature and power
鈥?/div>
鈥?/div>
鈭?/div>
鈭?/div>
鈥?/div>
鈥?/div>
鈥?/div>
cycling capability
IXYS advanced low Q
g
process
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Low gate charge and capacitances
min.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 3 ma
V
DS
= V
GS
, I
D
= 4 ma
V
GS
= 鹵20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
T
J
= 25擄C
T
J
= 125擄C
V
GS
= 0
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
鈮?/div>
300碌S, duty cycle d
鈮?/div>
2%
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
typ.
max.
V
4.5
鹵100
50
500
11
V
nA
碌A(chǔ)
碌A(chǔ)
鈩?/div>
S
1000
2.5
Advantages
鈥?/div>
Optimized for RF and high speed
鈥?/div>
鈥?/div>
High power density
switching at frequencies to >100MHz
Easy to mount鈥攏o insulators needed
0.8
1.5
DE150-102N02A 產(chǎn)品屬性
0現(xiàn)貨
停產(chǎn)
DE
管件
停產(chǎn)
MOSFET
N 通道
-
-
-
2A
-
-
200W
1000 V
-
6-SMD，扁平引線裸焊盤
DE150
DE150-102N02A相關(guān)型號(hào)PDF文件下載
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描述
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英文版
RF Power MOSFET
ETC [ETC]
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英文版
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg Hig...
ETC
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英文版
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg Hig...
ETC [ETC]
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英文版
RF Power MOSFET
IXYS [IXYS...
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英文版
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg Hig...
ETC
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英文版
N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg Hig...
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英文版
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TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)D...
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