Ordering number:EN2789B
DCF010
Silicon Epitaxial Planar Type (Anode Common)
Ultrahigh-Speed Switching Diode
Features
路 Ideally suited for use in hybrid ICs because of very
small-sized package.
路 Fast switching speed.
路 Small interterminal capacitance.
Package Dimensions
unit:mm
1186A
[DCF010]
1:Cathode1
2:Cathode2
3:Anode1, Anode2
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Current (1碌s)
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Unit rating
Total rating
Unit rationg
Total tating
Unit rating
total rating
Conditions
SANYO:MCP
Ratings
85
80
300
450
100
150
4
6
100
125
鈥?5 to +125
Unit
V
V
mA
mA
mA
mA
A
A
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Forward Voltage
Symbol
VF1
VF2
VF3
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
IR1
IR2
C
trr
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50
鈩?/div>
, Irr=0.1Irp
Conditions
Ratings
min
typ
0.61
0.74
1.20
0.1
0.5
4.0
4.0
max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
pF
ns
Reverse Recovery Time Test Circuit
Electrical Connection
(Top view)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)92995GI(KOTO)/5108TA, TS No.2789-1/2
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