DC COMPONENTS CO., LTD.
R
DC9012
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1W output amplifier of portable
redios in class B push-pull operation.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
o
o
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
J
T
STG
Rating
-40
-20
-5
-500
-100
625
+150
-55 to +150
Unit
V
V
V
mA
mA
mW
o
o
3 2 1
.050
Typ
(1.27)
C
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
-40
-20
-5
-
-
-
-
-
64
40
100
-
2%
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-0.1
-0.1
-0.6
-1.2
-0.9
300
-
-
8
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
V
-
-
MHz
pF
Test Conditions
I
C
=-100碌A(chǔ), I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100碌A(chǔ), I
C
=0
V
CB
=-25V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
I
C
=-10mA, V
CE
=-1V
I
C
=-50mA, V
CE
=-1V
I
C
=-500mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-1V, f=100MHz
V
CB
=-10V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
(1)
(1)
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
C
ob
380碌s, Duty Cycle
Classification of h
FE1
Rank
Range
D
64~91
E
78~112
F
96~135
G
112~166
H
144~202
I
176~300
I1
176~246
I2
214~300
1
