DC COMPONENTS CO., LTD.
R
DC8050
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
P
D
T
J
T
STG
Rating
40
25
6
1.5
500
1
2
+150
-55 to +150
Unit
V
V
V
A
mA
W
W
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
40
25
6
-
-
-
-
-
45
85
40
100
2%
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
0.1
0.1
0.5
1.2
1
-
500
-
-
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
V
-
-
-
MHz
Test Conditions
I
C
=100碌A(chǔ)
I
C
=2mA
I
E
=100碌A(chǔ)
V
CB
=35V
V
EB
=6V
I
C
=0.8A, I
B
=80mA
I
C
=0.8A, I
B
=80mA
I
C
=10mA, V
CE
=1V
I
C
=5mA, V
CE
=1V
I
C
=100mA, V
CE
=1V
I
C
=800mA, V
CE
=1V
I
C
=50mA, V
CE
=10V
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
(1)
(1)
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE1
h
FE2
h
FE3
Transition Frequency
(1)Pulse Test: Pulse Width
f
T
380碌s, Duty Cycle
Classification of h
FE2
Rank
Range
B
85~160
C
120~200
D
160~300
E
250~500
1
