鈥?/div>
Package Dimensions
unit : mm
1191A
[DBF150]
Glass passivation for high reliability.
Plastic molded structure.
Peak reverse voltage : VRM=200, 600V.
Average rectified current : IO=15A.
Electrical Connection
30.0
3.2
4.6
3.6
5.0
20.0
2.5
2.7
17.5
2.2
1.0
4.0
11.0
0.7
+
10.0
7.5
-
7.5
Specifications
Absolute Maximum Ratings
at Ta=25
擄
C
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Conditions
Tc=100擄C, With heatsink
Ta=25擄C, Without heatsink
50Hz sine 1cycle peak value
DBF150C
200
簍
簍
簍
簍
簍
DBF150G
600
15
3.2
200
150
--40 to +150
Unit
V
A
A
A
擄C
擄C
Electrical Characteristics
at Ta=25
擄
C Per Constituent element of bridge.
Parameter
Forward Voltage
Reverse Current
Thremal Resistance(Junction-Ambient)
Thremal Resistance(Junction-Case)
Note) Maximum tightening torque : 0.49N鈥
Symbol
VF
IR
Rth(j-a)
Rth(j-c)
Conditions
IF=7.5A
VR=At each VRM
Without heatsink
With heatsink
min
Ratings
typ
max
1.1
10
22
1.5
Unit
V
碌A(chǔ)
擄C/W
擄C/W
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42800 GI IM No.6566-1/3
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