RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
DB1012S
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE 1200 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 1.0 gram
.310 (7.9)
.290 (7.4)
.255 (6.5)
.245 (6.2)
DB-S
MECHANICAL DATA:
* Epoxy : UL flammability classification 94V-0
.042 (1.1)
.038 (1.0)
.013 (.330)
.003 (.076)
.410 (10.4)
.360 (9.4)
.009
(9.4)
.060 (1.524)
.040 (1.016)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.335 (8.51)
.320 (8.13)
.135 (3.4)
.115 (2.9)
.205 (5.2)
.195 (5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 40 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
I
FSM
T
J,
T
STG
50
-55 to + 150
Amps
0
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
DB1012S
1200
840
1200
1.0
UNITS
Volts
Volts
Volts
Amps
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
NOTE: Suffix 鈥?s鈥?Surface Mount for Dip Bridge.
@T
A
= 25
o
C
@T
A
= 125 C
o
SYMBOL
V
F
DB1012S
1.1
5.0
0.5
UNITS
Volts
uAmps
mAmps
1998-8
I
R
RECTRON
1
2
