D4SBN20 Datasheet

IC型號(hào)：
D4SBN20
PDF描述：
SBD Bridge Diode
文件大?。?/label>
136.08KB
PDF頁數(shù)：
2頁
芯片廠家：
SHINDENGEN

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SBD銉栥儶銉冦偢銉€銈ゃ偑銉箋儔

SBD Bridge Diode

銈楓兂銈般儷銈ゃ兂銉┿偆銉沖瀷

Single In-line Package

鈻犲錕?frac12;錕藉娉曞洺鈥僌UTLINE

DIMENSIONS

Package錛?S

D4SBN20

200V 4A

鐗歸暦

鈼忚杽鍨婼

P銉戙儍銈便兗銈?/div>

鈼廠BD銉栥儶銉冦偢

鈼忥拷½錕絍

銉伙拷½錕?/div>

鍝佸悕

Type No.

Unit : mm

Weight錛?.9g

錛坱yp.錛?/div>

綆＄悊鐣彿

錛堜緥錛?/div>

Control No.

銉儍銉堣鍙?/div>

錛堜緥錛?/div>

Date code

4.6

鹵0.2

蠁3.2

鈭?.1

錛?.2

鹵0.3

3.6

鹵0.2

D4SBN 20

0264

鹵0.3

9.5

鹵0.2

3.5

錛?/div>

鈭?鈭?/div>

鈭?/div>

鈶?/div>

鈶?鈶?/div>

鈶?/div>

1.25

鹵0.2

1.9

鹵0.2

1.0

鹵0.1

鈭?/div>

鹵0.2

鈭?/div>

1.7

鈭?/div>

2.7

鹵0.2

17.5

鹵0.5

Feature

鈼廡hin-S

鈼廠BD Bridge

鈼廘ow V

銉籐ow

0.7

鹵0.1

7.5

鹵0.2

7.5

鹵0.2

7.5

鹵0.2

鈶?/div>

錛堬拷½鍝佷笂銇〃紺恒伀銇ゃ亜銇︺伅銆佹嵑鍗頒粫妲樸倰銇旂⒑瑾嶃亸銇犮仌銇勶級(jí)

鈻犲畾鏍艱〃

RATINGS

闋?鐩?/div>

Item

璦樺彿

鏉?浠?/div>

Symbol Conditions

stg

FSM

Vdis

TOR

50Hz 姝ｅ雞娉紝鎶墊姉璨犺嵎

50Hz sine wave, Resistance load

銉曘偅銉充粯銇?/div>

With heatsink

Tc=103鈩?/div>

Ta=25鈩?/div>

鈼忕刀瀵炬渶澶у畾鏍?/div>

Absolute Maximum Ratings錛?/div>

鎸囧畾銇仾銇勫牬鍚堛伅

Tc= 25鈩冿紡

unless otherwise specified

錛?/div>

鍝?鍚?/div>

Type No.

鈥?/div>

D4SBN20

鈭?5鈭?50

150

200

4.0

2.2

2.0

0.8

鍗橈拷½錕?/div>

Unit

鈩?/div>

N銉籱

淇濆瓨娓╁害

Storage Temperature

鎺ュ悎閮ㄦ俯搴?/div>

Operation Junction Temperature

銇涖倱闋€嗛浕鍦?/div>

Maximum Reverse Voltage

鍑哄姏闆繪祦

Average Rectified Forward Current

銇涖倱闋偟銉箋偢闋嗛浕嫻?/div>

Peak Surge Forward Current

緄剁竵鑰愬湩

Dielectric Strength

綬犮倎浠樸亼銉堛儷銈?/div>

Mounting Torque

銉曘偅銉熾仾銇?/div>

Without heatsink

50Hz 姝ｅ雞娉紝闈炵拱銈婅繑銇?銈點(diǎn)偆銈儷銇涖倱闋€わ紝Tj=25鈩?/div>

50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25鈩?/div>

涓€鎷瀛愩兓銈便兗銈歸枔錛孉C錛戝垎闁撳嵃鍔?/div>

Terminals to Case, AC 1 minute

錛堟帹濂ㄥ€わ細(xì)0.5 N m錛?/div>

銉?/div>

錛圧ecommended

torque : 0.5 N m錛?/div>

銉?/div>

鈼忛浕姘楃殑銉?nèi)潌辩殑鐗规€р€僂lectrical

Characteristics錛?/div>

鎸囧畾銇仾銇勫牬鍚堛伅

Tc= 25鈩冿紡

unless otherwise specified

錛?/div>

闋嗛浕鍦?/div>

Forward Voltage

閫嗛浕嫻?/div>

Reverse Current

鎺ュ悎瀹歸噺

Junction Capacitance

胃jc

2A,

R =

200V,

銉戙儷銈規(guī)脯瀹氾紝涓€绱犲瓙錕?frac12;錕姐仧銈娿伄瑕忔牸鍊?/div>

Pulse measurement, per diode

銉戙儷銈規(guī)脯瀹氾紝涓€绱犲瓙錕?frac12;錕姐仧銈娿伄瑕忔牸鍊?/div>

Pulse measurement, per diode

涓€绱犲瓙錕?frac12;錕姐仧銈娿伄瑕忔牸鍊?/div>

per diode

MAX

TYP

MAX

0.90

1.5

6.0

8.0

渭A

1MHz, V

10V,

鎺ュ悎閮ㄣ兓銉兗銉夐枔

junction to lead

鎺ュ悎閮ㄣ兓鍛ㄥ洸闁?/div>

junction to ambient

鎺ュ悎閮ㄣ兓銈便兗銈歸枔錛屻儠銈ｃ兂浠樸亶

junction to case, With heatsink

鐔辨姷鎶?/div>

Thermal Resistance

胃jl

胃ja

鈩?W

142

錛圝

514 - 6錛?/div>

www.shindengen.co.jp/product/semi/

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