D45H2A
D45H2A
PNP Power Amplifier
鈥?This device is designed for power amplifier, regulator and switching
circuits where speed is important.
鈥?Sourced from process 5Q.
TO-220
1
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
30
8.0
- 55 ~ 150
Units
V
A
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= 100mA, IB = 0
V
CB
= 60V, IE = 0
V
EB
= 5V, IC = 0
V
CE
= 5V, I
C
= 8A
V
CE
= 5V, I
C
= 10A
V
CE
= 5V, I
C
= 12A
I
C
= 8A, I
B
= 0.4A
I
C
= 8A, I
B
= 0.8A
V
CE
= 10V, I
C
= 500mA
25
100
80
65
1
1.5
V
V
MHz
Min.
30
10
100
Typ.
Max.
Units
V
碌A(chǔ)
碌A(chǔ)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
On Characteristics
V
CE
(sat)
V
BE
(sat)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Small Signal Characteristics
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Max.
60
480
2.1
62.5
Units
W
mW/擄C
擄C/W
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. A, February 2002