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(1) Pulse Width
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?0.5 V (Max)
鈥?/div>
High ft for Good Frequency Response
鈥?/div>
Low Leakage Current
. . . for general purpose driver or medium power output stages in CW or switching
applications.
Complementary Silicon Power
Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TJ = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
(REPLACES D44C)
DC Current Gain
(VCE = 1.0 Vdc, IC = 0.2 Adc)
(VCE = 1.0 Vdc, IC = 1.0 Adc)
(VCE = 1.0 Vdc, IC = 2.0 Adc)
Total Power Dissipation @ TC = 25
_
C
Total Power Dissipation
@ TA = 25
_
C
Maximum Lead Temperature for Soldering Purposes: 1/8鈥?from Case for 5 Seconds
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Collector Current 鈥?Continuous
Peak (1)
Emitter Base Voltage
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
v
6.0 ms, Duty Cycle
v
50%.
Characteristic
Characteristic
Rating
Symbol
hFE
Min
Symbol
Symbol
TJ, Tstg
40
20
20
VCEO
VCES
R
胃JC
R
胃JA
VEB
PD
TL
IC
4.0 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 VOLTS
鈥?55 to 150
Value
Max
30
1.67
275
4.2
4.0
6.0
5.0
Max
75
90
80
120
鈥?/div>
鈥?/div>
CASE 221A鈥?6
TO鈥?20AB
D45C
Order this document
by D45C/D
PNP
Watts
W/
_
C
_
C/W
_
C/W
Unit
Unit
Adc
Vdc
Vdc
Vdc
_
C
_
C
Unit
next
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MOTOROLA
1
2
3
4
