鈥?/div>
20
碌A(chǔ)
typical CMOS standby current
s
JEDEC-approved pinout
s
Single +5 V power supply
s
鹵10%
power supply tolerance available
s
100% Flashrite programming
鈥?Typical programming time of 4 seconds
Advanced
Micro
Devices
s
Latch-up protected to 100 mA from 鈥? V to
V
CC
+ 1 V
s
High noise immunity
s
Versatile features for simple interfacing
鈥?Both CMOS and TTL input/output
compatibility
鈥?Two line control functions
s
Standard 28-pin DIP, PDIP, 32-pin TSOP and
PLCC packages
GENERAL DESCRIPTION
The Am27C256 is a 256K-bit ultraviolet erasable pro-
grammable read-only memory. It is organized as 32K
words by 8 bits per word, operates from a single +5 V
supply, has a static standby mode, and features fast sin-
gle address location programming. Products are avail-
able in windowed ceramic DIP packages as well as plas-
tic one time programmable (OTP) PDIP, TSOP, and
PLCC packages.
Typically, any byte can be accessed in less than 55 ns,
allowing operation with high-performance microproces-
sors without any WAIT states. The Am27C256 offers
separate Output Enable (OE) and Chip Enable (CE)
controls, thus eliminating bus contention in a multiple
bus microprocessor system.
AMD鈥檚 CMOS process technology provides high speed,
low power, and high noise immunity. Typical power con-
sumption is only 80 mW in active mode, and 100
碌W
in
standby mode.
All signals are TTL levels, including programming sig-
nals. Bit locations may be programmed singly, in blocks,
or at random. The Am27C256 supports AMD鈥檚 Flashrite
programming algorithm (100
碌s
pulses) resulting in typi-
cal programming time of 4 seconds.
BLOCK DIAGRAM
V
CC
V
SS
V
PP
Data Outputs
DQ0鈥揇Q7
OE
CE
Output Enable
Chip Enable
and
Prog Logic
Y
Decoder
Output
Buffers
Y
Gating
A0鈥揂14
Address
Inputs
X
Decoder
262,144
Bit Cell
Matrix
08007H-1
2-32
Publication#
08007
Rev.
H
Issue Date:
May 1995
Amendment
/0