TetraFET
D2054UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
E
D
8
1
7
6
3
4
2
C
R
A
F
5
Q
O
N
M
J
K
L
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W 鈥?28V 鈥?1GHz
PUSH鈥揚ULL
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?VERY LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
鈥?LOW NOISE
鈥?HIGH GAIN 鈥?13 dB MINIMUM
I
P
H
G
DBC4 Package
PIN 1 Source (Common) PIN 5 Source (Common)
PIN 2 Drain 1
PIN 3 Drain 2
PIN 6 Gate 2
PIN 7 Gate 1
PIN 4 Source (Common) PIN 8 Source (Common)
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
mm
6.47
0.76
45擄
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
0.25
Tol.
0.08
0.08
5擄
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
0.07
Inches
.255
.030
45
擄
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
0.010
Tol.
.003
.003
5擄
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
.003
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/00
Power Dissipation
Drain 鈥?Source Breakdown Voltage *
Gate 鈥?Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
29W
65V
鹵20V
2A
鈥?5 to 150擄C
200擄C
1
2
