TetraFET
D2053UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
E
D
8
1
7
6
3
4
2
C
R
A
F
5
Q
O
N
M
J
K
L
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W 鈥?28V 鈥?1GHz
PUSH鈥揚ULL
FEATURES
I
P
H
G
鈥?SIMPLIFIED AMPLIFIER DESIGN
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?VERY LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
Tol.
.003
.003
5擄
.003
.003
.003
.005
.003
.003
.001
.001
.001
.003
.003
.003
.020
max
.003
DBC4 Package
PIN 1 Source (Common) PIN 5 Source (Common)
PIN 2 Drain 1
PIN 3 Drain 2
PIN 6 Gate 2
PIN 7 Gate 1
PIN 4 Source (Common) PIN 8 Source (Common)
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
mm
6.47
0.76
45擄
0.76
1.14
2.67
11.73
8.43
7.92
0.20
0.64
0.30
3.25
2.11
6.35SQ
1.65
0.13
0.25
Tol.
0.08
0.08
5擄
0.08
0.08
0.08
0.13
0.08
0.08
0.02
0.02
0.02
0.08
0.08
0.08
0.51
max
0.07
Inches
.255
.030
45
擄
.030
.045
.105
.462
.332
.312
.008
.025
.012
.128
.083
.250SQ
.065
.005
0.010
鈥?LOW NOISE
鈥?HIGH GAIN 鈥?13 dB MINIMUM
APPLICATIONS
鈥?/div>
VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Power Dissipation
Drain 鈥?Source Breakdown Voltage *
Gate 鈥?Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
15W
65V
鹵20V
1A
鈥?5 to 150擄C
200擄C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/00
1
2
