D1213 Datasheet

IC型號(hào)：
D1213
PDF描述：
METAL GATE RF SILICON FET
文件大小：
41.98KB
PDF頁數(shù)：
4頁
芯片廠家：
SEME-LAB

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TetraFET

D1213UK

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

6W 鈥?7.2V 鈥?500MHz

SINGLE ENDED

DBC1 Package

PIN 1 Source

PIN 2 Drain

PIN 3 Drain

PIN 4 Source

DIM

6.47

0.76

45擄

0.76

1.14

2.67

11.73

8.43

7.92

0.20

0.64

0.30

3.25

2.11

6.35SQ

1.65

0.13

FEATURES

鈥?SIMPLIFIED AMPLIFIER DESIGN

鈥?SUITABLE FOR BROAD BAND APPLICATIONS

鈥?LOW C

rss

Tol.

.003

5擄

.003

.005

.003

.001

.003

.020

max

PIN 5 Source

PIN 6 Gate

PIN 7 Gate

PIN 8 Source

Tol.

0.08

5擄

0.08

0.13

0.08

0.02

0.08

0.51

max

Inches

.255

.030

擄

.030

.045

.105

.462

.332

.312

.008

.025

.012

.128

.083

.250SQ

.065

.005

鈥?LOW NOISE

鈥?HIGH GAIN 鈥?10 dB MINIMUM

APPLICATIONS

鈥?/div>

HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

ABSOLUTE MAXIMUM RATINGS

case

= 25擄C unless otherwise stated)

DSS

GSS

D(sat)

stg

Semelab plc.

Power Dissipation

Drain 鈥?Source Breakdown Voltage

Gate 鈥?Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

58W

40V

鹵20V

20A

鈥?5 to 150擄C

200擄C

Prelim. 7/99

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