TetraFET
D1212UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
(4 pls)
C
G
(typ)
2
1
A
D
3
E
5
I
F
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W 鈥?12.5V 鈥?500MHz
PUSH鈥揚(yáng)ULL
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
N
M
H
J
K
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1
GATE 2
DH
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
13.97
5.72
45擄
9.78
1.65R
23.75
1.52R
30.48
19.17
0.13
2.54
1.52
5.08
Tol.
0.26
0.13
5擄
0.13
0.13
0.13
0.13
0.13
0.26
0.02
0.13
0.13
0.50
Inches
0.550
0.225
45擄
0.385
0.065R
0.935
0.060R
1.200
0.755
0.005
0.100
0.060
0.200
Tol.
0.010
0.005
5擄
0.005
0.005
0.005
0.005
0.005
0.010
0.001
0.005
0.005
0.020
PIN 2
PIN 4
鈥?LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
鈥?LOW NOISE
鈥?HIGH GAIN 鈥?10 dB MINIMUM
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Prelim. 1/96
Power Dissipation
Drain 鈥?Source Breakdown Voltage *
Gate 鈥?Source Breakdown Voltage *
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
290W
40V
鹵20V
30A
鈥?5 to 150擄C
200擄C
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
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