TetraFET
D1209UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
K
B
(2
pls)
E
C
1
2
3
D
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W 鈥?12.5V 鈥?400MHz
PUSH鈥揚ULL
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
G
(4
pls)
F
H
J
I
M
N
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?VERY LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
鈥?LOW NOISE
DK
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
DRAIN 1
GATE 2
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45擄
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5擄
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45擄
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5擄
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
鈥?HIGH GAIN 鈥?10 dB MINIMUM
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Power Dissipation
Drain 鈥?Source Breakdown Voltage *
Gate 鈥?Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
100W
40V
鹵20V
10A
鈥?5 to 150擄C
200擄C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
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