TetraFET
D1201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
N
(typ)
B
3
D
(2 pls)
2
1
A
F
(2 pls)
H
J
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W 鈥?12.5V 鈥?500MHz
SINGLE ENDED
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?LOW C
rss
鈥?USEFUL P
O
AT 1GHz
DP
PIN 1
PIN 3
SOURCE
GATE
PIN 2
DRAIN
DIM
mm
A
16.51
B
6.35
C
45擄
D
3.30
E
18.92
F
1.52
G
2.16
H
14.22
I
1.52
J
6.35
K
0.13
M
5.08
N 1.27 x 45擄
Tol.
0.25
0.13
5擄
0.13
0.08
0.13
0.13
0.08
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45擄
0.130
0.745
0.060
0.085
0.560
0.060
0.250
0.005
0.200
0.050 x 45擄
Tol.
0.010
0.005
5擄
0.005
0.003
0.005
0.005
0.003
0.005
0.005
0.001
0.020
0.005
鈥?LOW NOISE
鈥?HIGH GAIN 鈥?10 dB MINIMUM
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain 鈥?Source Breakdown Voltage
Gate 鈥?Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
40V
鹵20V
10A
鈥?5 to 150擄C
200擄C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim.12/00
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