鈥?/div>
EXTRA LOW C
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BROAD BAND
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN
20W - 28V - 500MHz
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25擄C unless otherwise stated)
P
D
BV
DSS
V
GSS
I
D
T
stg
T
j
Power Dissipation
Drain-source breakdown voltage
Gate-source breakdown voltage
Drain Current
Storage temperature
Maximum operating junction temperature
87.5W
70V
鹵20V
5A
-65
to 150擄C
200擄C
Max. 2.0擄C/W
APPLICATIONS
鈥?HF/VHF/UHF COMMUNICATIONS
from DC to 500MHz
R
THj-case
Thermal resistance junction-case
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25擄C unless otherwise stated)
Parameter
BV
DSS
I
DSS
I
GSS
V
GS(th)
gfs
G
PS
畏
VSWR
C
iss
C
oss
C
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Breakdown voltage, drain source
Drain leakage current
Gate leakage current
Gate threshold voltage
Transconductance (300碌s pulse)
Common source power gain
Drain efficiency
Load mismatch tolerance
Input capacitance
Output capacitance
Reverse transfer capacitance
Test Conditions
V
GS
=0
V
DS
=28V
V
GS
=20V
I
D
=10mA
V
DS
=10V
I
D
=100mA
V
GS
=0
V
DS
=0
V
DS
=V
GS
I
D
=2A
Min. Typ. Max.
70
2
1
7
Unit
Vdc
mAdc
碌Adc
Vdc
Mhos
dB
%
1
1.6
13
60
20:1
P
O
=20W
V
DS
=28V I
DQ
=0.2A
f=400MHz
V
DS
=0V
V
DS
=28V
V
DS
=28V
V
GS
=-5V
V
GS
=0
V
GS
=0
f=1MHz
f=1MHz
f=1MHz
120
50
5
pF
pF
pF
DIMENSIONS
C
F
A
DM
A
B
C
D
E
F
G
H
I
J
K
M
Millimeter
16.51
6.35
1.52
3.30
18.90
1.27 X 45擄
2.16
14.22
1.52
6.35
0.10
5.08
TOL Inches
.25
.650
.13
.250
.13
.060
.13
.130
.13
.744
.13 .05 X 45擄
.13
.085
.05
.560
.13
.060
.13
.250
.02
.004
MAX
.200
TOL
.010
.005
.005
.005
.005
.005
.005
.005
.005
.005
.001
MAX
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and
metal flange is beryllium oxide. Beryllium oxide dust is
highly toxic and care must be taken during handling
and mounting to avoid damage to this area. THESE
DEVICES MUST NEVER BE THROWN AWAY WITH
GENERAL INDUSTRIAL OR DOMESTIC WASTE.
B
D
H
J
M
I
E
K
G
U.S. PATENTS 5,121,176 & 5,179,032
GLOBAL PATENTS PENDING
2697 Lavery Court #8 鈥?Newbury Park, CA 91320 鈥?(805) 375-6600 鈥?Fax: (805) 375- 6602 鈥?www.point9.com 鈥?www.rfmosfet.com
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