CZT5401
PNP SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CZT5401
type is an PNP silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for high
voltage amplifier applications.
SOT-223 CASE
MAXIMUM RATINGS
(TA=25
o
C)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
螛
JA
UNITS
V
V
V
mA
W
o
C
o
C/W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
160
150
5.0
600
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS
(TA=25
o
C unless otherwise noted)
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCB=100V
VCB=100V, TA=150
o
C
VEB=3.0V
IC=100碌A(chǔ)
IC=1.0mA
IE=10碌A(chǔ)
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
MIN
MAX
50
50
50
UNITS
nA
mA
nA
V
V
V
V
V
V
V
160
150
5.0
0.2
0.5
1.0
1.0
50
60
50
240
314
1
2
