CZT5338
NPN SILICON
POWER TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
POWER
TM
223
The CENTRAL SEMICONDUCTOR CZT5338
type is an NPN silicon power transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for applications requiring extremely
high current amplification and switching
capability.
SOT-223 CASE
MAXIMUM RATINGS
(TA=25
o
C)
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ,Tstg
螛
JA
UNITS
V
V
V
A
A
W
o
C
o
C/W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
100
100
6.0
5.0
1.0
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS
(TA=25
o
C unless otherwise noted)
SYMBOL
ICBO
IEBO
ICEO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCB=100V
VBE=6.0V
VCE=90V
IC=50mA
IC=2.0A, IB=200mA
IC=5.0A, IB=500mA
IC=2.0A, IB=200mA
IC=5.0A, IB=500mA
VCE=2.0V, IC=500mA
VCE=2.0V, IC=2.0A
VCE=2.0V, IC=5.0A
MIN
MAX
10
100
100
0.7
1.2
1.2
1.8
30
30
20
120
UNITS
碌A
碌A
碌A
V
V
V
V
V
100
312
1
2
