NE
W
CZT31C NPN
CZT32C PNP
Central
DESCRIPTION:
TM
Semiconductor Corp.
2.0W COMPLEMENTARY SILICON
POWER TRANSISTOR
POWER
TM
223
The CENTRAL SEMICONDUCTOR CZT31C
and CZT32C types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 3.0 amps.
SOT-223 CASE
MAXIMUM RATINGS:
(TA=25
o
C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ,Tstg
螛
JA
100
100
5.0
3.0
6.0
1.0
2.0
-65 to +150
62.5
UNITS
V
V
V
A
A
A
W
o
C
o
C/W
ELECTRICAL CHARACTERISTICS:
(TA=25
o
C unless otherwise noted)
SYMBOL
ICES
ICEO
IEBO
BVCEO
* VCE(SAT)
* VBE(ON)
* hFE
* hFE
fT
* Pulsed, 2%D.C.
TEST CONDITIONS
VCE=100V
VCE=60V
VEB=5.0V
IC=30mA
IC=3.0A, IB=375mA
VCE=4.0V, IC=3.0A
VCE=4.0V, IC=1.0A
VCE=4.0V, IC=3.0A
VCE=10V, IC=500mA, f=1.0MHz
MIN
MAX
200
300
1.0
1.2
1.8
25
10
3.0
100
MHz
UNITS
碌A(chǔ)
碌A(chǔ)
mA
V
V
V
100
294
1
2
