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Fast access times: 7.5 and 8 ns
Fast clock speed: 117 and 100 MHz
Provide high-performance 2-1-1-1 access rate
Fast OE access times: 4.0 ns
3.3V 鈥?% and +10% power supply
2.5V or 3.3V I/O supply
5V tolerant inputs except I/Os
Clamp diodes to V
SSQ
at all inputs and outputs
Common data inputs and data outputs
Byte Write Enable and Global Write control
Three chip enables for depth expansion and address
pipeline
Address, data, and control registers
Internally self-timed Write Cycle
Burst control pins (interleaved or linear burst se-
quence)
Automatic power-down for portable applications
Low profile 119-lead, 14-mm x 22-mm BGA (Ball Grid
Array) and 100-pin TQFP packages
eral circuitry and a 2-bit counter for internal burst operation. All
synchronous inputs are gated by registers controlled by a pos-
itive-edge-triggered Clock Input (CLK). The synchronous in-
puts include all addresses, all data inputs, address-pipelining
Chip Enable (CE), depth-expansion Chip Enables (CE2 and
CE2), Burst Control inputs (ADSC, ADSP, and ADV), Write
Enables (WEL, WEH, and BWE), and Global Write (GW).
Asynchronous inputs include the Output Enable (OE) and
Burst Mode Control (MODE), and Sleep Mode Control (ZZ).
The data outputs (DQ), enabled by OE, are also asynchro-
nous.
Addresses and chip enables are registered with either Ad-
dress Status Processor (ADSP) or Address Status Controller
(ADSC) input pins. Subsequent burst addresses can be inter-
nally generated as controlled by the Burst Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle. Write cycles can be one to
four bytes wide as controlled by the write control inputs. Indi-
vidual byte write allows individual byte to be written. BW1 con-
trols DQ1鈥揇Q8 and DQP1. BW2 controls DQ9鈥揇Q16 and
DQP2. BW3 controls DQ17鈥揇Q24 and DQP3. BW4 controls
DQ25鈥揇Q32 and DQP4. BW1, BW2, BW3, and BW4 can be
active only with BWE being LOW. GW being LOW causes all
bytes to be written.
The CY7C1345A/GVT71128E36 operates from a +3.3V pow-
er supply and all outputs operate on a +2.5V supply. All inputs
and outputs are JEDEC standard JESD8-5 compatible. The
device is ideally suited for 486, Pentium廬, 680x0, and Power-
PC鈩?systems and for systems that benefit from a wide syn-
chronous data bus.
Functional Description
The Cypress Synchronous Burst SRAM family employs high-
speed, low-power CMOS designs using advanced triple-layer
polysilicon, double-layer metal technology. Each memory cell
consists of four transistors and two high-valued resistors.
The
CY7C1345A/GVT71128E36
SRAM
integrates
131,072x36 SRAM cells with advanced synchronous periph-
Selection Guide
7C1345A-117
71128E36-7
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
7.5
370
10
7C1345A-100
71128E36-8
8
320
10
7C1345A-100
71128E36-9
8
320
10
7C1345A-100
71128E36-10
8
320
10
Cypress Semiconductor Corporation
Document #: 38-05123 Rev. *A
鈥?/div>
3901 North First Street
鈥?/div>
San Jose
,
CA 95134
鈥?/div>
408-943-2600
Revised November 13, 2002
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