CXG1118ER
Dual-band Low Noise Amplifier/Mixer
Description
The CXG1118ER is a dual-band (CDMA/GPS) low
noise amplifier/mixer MMIC for the Japan CDMA
cellular phones (J-CDMA). This IC is designed using
the Sony鈥檚 GaAs J-FET process.
Features
鈥?High gain:
CDMA LNA High current mode
Gp = 14.5dB (Typ.)
CDMA MIX
Gc = 12dB (Typ.)
GPS
LNA
Gp = 18dB (Typ.)
GPS
MIX
Gc = 9.5dB (Typ.)
鈥?Low noise figure:
CDMA LNA High current mode
NF = 1.5dB (Typ.)
CDMA MIX
NF = 4.5dB (Typ.)
GPS
LNA
NF = 1.7dB (Typ.)
GPS
MIX
NF = 5dB (Typ.)
鈥?Low distortion
CDMA LNA High current mode
Input IP3 = +3.5dBm (Typ.)
CDMA MIX
Input IP3 = +2dBm (Typ.)
GPS
LNA
Input IP3 = 鈥?.5dBm (Typ.)
GPS
MIX
Input IP3 = +2dBm (Typ.)
鈥?Low noise amplifier with by-pass switch
鈥?J-CDMA/GPS supported dual band
鈥?Sharing the two-system LO signal source by the
doubler system
鈥?24-pin VQFN small package
CDMA LNA
IN
24 pin VQFN (Plastic)
Applications
J-CDMA
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings
(Ta = 25擄C)
鈥?/div>
Supply voltage
V
DD
4.5
V
鈥?/div>
Input power
P
IN
+5
dBm
鈥?/div>
Operating temperature Topr
鈥?5 to +85 擄C
鈥?/div>
Storage temperature
Tstg
鈥?5 to +150 擄C
Recommended Operating Conditions
鈥?/div>
Supply voltage
V
DD
2.7 to 3.3
鈥?/div>
Control voltage
V
CTL
(H) 2.4 to 3.3
V
CTL
(L) 0 to 0.3
V
V
V
Block Diagram and Pin Configuration
CAP
GPS LNA
IN
LNA OPT
GND
12
CDMA LNA
OUT
/V
DD
(LNA)
13
CTL2
14
NC
15
GND
16
CDMA MIX RF
IN
17
CTL3
18
19
LO
IN
11
10
9
8
CAP
7
6
GPS LNA
OUT
/V
DD
(LNA)
5
CTL1
4
MPX OPT
3
GND
2
GPS MIX RF
IN
脳2
20
V
DD
(GPS LO)
1
GPS IF
OUT
/V
DD
(MIX)
22
V
DD
(Logic)
21
GND
23
V
DD
(CDMA LO)
24
CDMA IF
OUT
/V
DD
(MIX)
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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