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CXG1045N Datasheet

  • CXG1045N

  • High Power DPDT Switch for GSM

  • 66.68KB

  • 5頁(yè)

  • SONY   SONY

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CXG1045N
High Power DPDT Switch for GSM
For the availability of this product, please contact the sales office.
Description
The CXG1045N is a DPDT (Dual Pole Dual Throw)
antenna switch MMIC used in personal communication
handsets such as GSM, GSM1800 or dualband. This
IC is designed using the Sony's GaAs J-FET process.
Features
鈥?/div>
Low insertion loss:
0.4dB (Typ.) @900MHz
0.7dB (Typ.) @1.8GHz
8 pin SSOP (Plastic)
鈥?/div>
High power switching P1dB: 38dBm (Typ.) @900MHz
37dBm (Typ.) @1.8GHz
鈥?/div>
Small package SSOP-8pin: (3
脳
6.4
脳
1.25mm)
鈥?/div>
Low current:
Application
鈥?/div>
GSM900 or GSM1800 handsets
鈥?/div>
GSM900/GSM1800 dualband handsets
Structure
GaAs J-FET MMIC
Operating Condition
Control voltage: Vctl (H) 鈥?Vctl (L): 2.5 to 5V @Ta = 25擄C
200碌A(chǔ) (Typ.)
鈭?/div>
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
鈥?鈥?/div>
E98902A92-PS

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