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CX77314 Datasheet

  • CX77314

  • CX77314 Product Summary|PA Modules for GSM/GPRS Handsets

  • 407.70KB

  • 2頁

  • ETC

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PRODUCT SUMMARY
CX77314
PA Module for Quad-band GSM850/900 DCS1800 PCS1900 /
GPRS Applications
The CX77314 Power Amplifier Module (PAM) is designed in a compact form factor
for quad-band cellular handsets comprising GSM850/900, DCS1800, and PCS1900
operation. The PAM also supports Class 10 and Class 12 General Packet Radio
Service (GPRS) multi-slot operation.
Distinguishing Features
鈥?/div>
High efficiency
GSM850 55%
GSM900 55%
DCS 45%;
PCS 45%
Input/output matching
50
鈩?/div>
internal
Small outline
8 mm
10 mm
Low profile
1.5 mm maximum
Low APC current
10
碌A(chǔ),
typical
Gold plated, lead-free contacts
Applications
The RF input and output ports are internally matched to 50
鈩?/div>
to reduce the
鈥?Quad-band cellular handsets
number of external components for a quad-band design. Extremely low leakage
encompassing
current (10
碌A(chǔ),
typical) of the dual PA module maximizes handset standby time.
GSM850/900 (Class 4)
The
CX77314
also contains band select switching circuitry to select GSM (logic 0)
DCS1800
and DCS/PCS (logic 1) as determined from the Band Select (BS) signal.
In the
PCS1900, and
functional block diagram shown below, the BS pin selects the PA output
GPRS (Class 10 and Class 12)
(DCS/PCS OUT or GSM850/900 OUT) while the Analog Power Control (APC) controls
multi-slot operation
the level of output power.
Functional Block Diagram
The module consists of a GSM850/900 PA block and a DCS1800/PCS1900 PA
block, impedance-matching circuitry for 50
鈩?/div>
input and output impedances, and
interface circuitry.
The two separate Heterojunction Bipolar Transistor (HBT) PA
blocks are fabricated onto a single Gallium Arsenide (GaAs) die. One PA block
supports the GSM850/900 bands and the other PA block supports the DCS1800 and
PCS1900 bands. Both PA blocks share common power supply pins to distribute
current. A custom CMOS integrated circuit provides the internal interface circuitry,
including
a current amplifier that minimizes the required power control current
(I
APC
) to 10
碌A(chǔ),
typical. The GaAs die, the Silicon (Si) die, and the passive
components are mounted on a multi-layer laminate substrate. The assembly is
encapsulated with plastic overmold.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
HBT
GSM850/900 IN
Match
Match
GSM850/900 OUT
Power Control
Band Select
CMOS
Bias
Controller
DCS/PCS IN
Match
Match
DCS/PCS OUT
Advance Information
Skyworks Solutions, Inc. Proprietary and Confidential
漏 2001-2003 Skyworks Solutions, Inc., All Rights Reserved.
101860P3
January 3, 2003

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