Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CTN368
CTN369
TO-237
Plastic Package
Complementary CTN 369
Amplifier Transistors.
ABSOLUTE MAXIMUM RATINGS(Ta=25潞 C unless specified otherwise )
DESCRIPTION
SYMBOL
V
CES
Collector -Emitter Voltage
V
CEO
Collector -Emitter Voltage
V
EBO
Emitter Base Voltage
I
C
Collector Current Continuous
P
D
Total Power Dissipation @T
A
=25潞C
Derate Above =25潞C
P
D
Total Power Dissipation @T
C
=25潞C
Derate Above =25潞C
T
j
, T
stg
Operating and Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Juction to Ambient
R
th(j-c)
R
th(j-a)
45
156
潞C/W
潞C/W
VALUE
25
20
5
1
1.0
6.4
2.75
22
-55 to +150
UNIT
V
V
V
A
W
mW/潞C
W
mW/潞C
潞C
ELECTRICAL CHARACTERISTICS (Ta=25潞 C unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
V
CEO
I
C
=10mA, I
B
=0
Collector Emitter Breakdown Voltage
V
CBO
I
C
=100碌A(chǔ), I
E
=0
Collector Base Breakdown Voltage
V
EBO
I
E
=100碌A(chǔ), I
C
=0
Emitter Base Breakdown Voltage
I
CBO
V
CB
=25V, I
E
=0
Collector Cut off Current
I
E
=0, V
CB
=25V,
T
j
=150潞C
I
EBO
V
EB
=5V, I
C
=0
Emitter Cut off Current
V
BE(on)
I
C
=1A, V
CE
=1V
Base Emitter on Voltage
V
CE(sat)
I
C
=1A,I
B
=100mA
Collector Emitter Saturation Voltage
h
FE
I
C
=5mA,V
CE
=10V
DC Current Gain
I
C
=500mA,V
CE
=1V
I
C
=1A,V
CE
=1V
DYNAMIC CHARACTERISTICS
f
T
V
CE
=5V, I
C
=10mA,
Transition Frequency
f=20MHz
MIN
20
25
5
MAX
10
1
10
1
0.5
50
85
60
65
375
UNIT
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
MHz
Continental Device India Limited
Data Sheet
Page 1 of 3
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