SPICE MODEL: CTA2P1N
CTA2P1N
COMPLEX TRANSISTOR ARRAY
Features
NEW PRODUCT
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Combines MMBT4403 type transistor with 2N7002 type MOSFET
Small Surface Mount Package
NPN/P-Channel Complement Available: CTA2N1P
Lead Free/RoHS Compliant (Note 1)
A
SOT-363
Dim
A
B
C
D
G
H
K
M
Min
0.10
1.15
2.00
0.30
1.80
戮
0.90
0.25
0.10
0擄
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8擄
Mechanical Data
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Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking: A80, See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approx.)
Q1
A80
B C
0.65 Nominal
F
H
J
K
L
M
a
J
D
G
Q2
F
S
Q2
L
C
Q1
All Dimensions in mm
Q2
E
Q1
B
Q1
D
Q2
Maximum Ratings, Total Device
@ T
A
= 25擄C unless otherwise specified
Characteristic
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
Symbol
P
d
R
qJA
T
j
, T
STG
Value
150
833
-55 to +150
Unit
mW
擄C/W
擄C
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
@ T
A
= 25擄C unless otherwise specified
Value
-40
-40
-5.0
-600
Unit
V
V
V
mA
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
攏
1.0MW
Gate-Source Voltage
Drain Current (Note 2)
Continuous
Pulsed
Continuous
Continuous @ 100擄C
Pulsed
Symbol
V
DSS
V
DGR
V
GSS
I
D
@ T
A
= 25擄C unless otherwise specified
Value
60
60
鹵20
鹵40
115
73
800
Units
V
V
V
mA
Notes: 1. No purposefully added lead.
DS30296 Rev. 7 - 2
1 of 7
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CTA2P1N
茫
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